AQX IRF7416TRPBF Nyowani uye yepakutanga yakabatanidzwa Circuit ic chip IRF7416TRPBF
Product Attributes
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Zvigadzirwa |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tepi & Reel (TR) Cheka Tape (CT) Digi-Reel® |
| Product Status | Active |
| FET Type | P-Channel |
| Vadivelu Comedy Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Ikozvino – Kudonhedza Kunodonhedza (Id) @ 25°C | 10A (Ta) |
| Dhiraivha Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| FET Feature | - |
| Kubvisa Simba (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Nyaya | 8-SOIC (0.154″, 3.90mm Kufara) |
| Base Product Number | IRF7416 |
Zvinyorwa & Media
| RESOURCE TYPE | LINK |
| Datasheets | IRF7416PbF |
| Mamwe Magwaro Anoenderana | IR Chikamu Chekuverengera System |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Featured Product | Data Processing Systems |
| HTML Datasheet | IRF7416PbF |
| EDA Models | IRF7416TRPBF ne Ultra Librarian |
| Simulation Models | IRF7416PBF Saber Model |
Environmental & Export Classifications
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Inoenderana |
| Moisture Sensitivity Level (MSL) | 1 (Isina muganho) |
| REACH Status | SIKIRA Usina Kubatwa |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Zvimwe Zvishandiso
| ATTRIBUTE | DESCRIPTION |
| Mamwe Mazita | IRF7416TRPBFDKR SP001554262 IRF7416TRPBFCT IRF7416TRPBF-ND IRF7416TRPBFTR |
| Standard Package | 4,000 |
IRF7416
Benefits
Planar cell chimiro cheyakafara SOA
Yakagadziridzwa kuti iwanikwe zvakanyanya kubva kune vanogovera
Kufanirwa kwechigadzirwa zvinoenderana neJEDEC standard
Silicon yakagadziridzwa yekushandisa switching pazasi <100KHz
Indasitiri chiyero chepamusoro-gomo remagetsi pasuru
Kugona kuve wave-soldered
-30V Imwe P-Channel HEXFET Simba MOSFET mune SO-8 pasuru
Benefits
RoHS Inoenderana
Yakaderera RDS (yakabatidzwa)
Indasitiri-inotungamira mhando
Dynamic dv/dt Rating
Kukurumidza Kuchinja
Fully Avalanche Rated
175°C Kushanda Tembiricha
P-Channel MOSFET
Transistor
Transistor is asemiconductor mudziyokujairaamplifykanachinjazviratidzo zvemagetsi uyesimba.Iyo transistor ndeimwe yezvivakwa zvekuvaka zvemazuva anozvemagetsi.[1]Inoumbwa nesemiconductor zvinhu, kazhinji nevanenge vatatuzviteshiyekubatanidza kune dhizaini yemagetsi.Avoltagekanacurrentinoshandiswa kune imwe peya ye transistor's terminals inodzora ikozvino kuburikidza neimwe peya yematerminal.Nekuti iyo inodzorwa (yekuburitsa) simba inogona kukwira kupfuura yekudzora (yekuisa) simba, transistor inogona kukwidziridza chiratidzo.Mamwe ma transistors anoiswa ega, asi akawanda akawanda anowanikwa akaiswa mukatimasekete akabatanidzwa.
Austro-Hungarian nyanzvi yefizikisi Julius Edgar Lilienfeldakaronga pfungwa yekuti amunda-effect transistormuna 1926, asi zvakange zvisingaite kugadzira mudziyo unoshanda panguva iyoyo.[2]Chishandiso chekutanga chekushanda chakavakwa chaive apoint-contact transistoryakagadzirwa muna 1947 neAmerican physicsJohn BardeenuyeWalter Brattainuchishanda pasiWilliam ShockleypaBell Labs.Vatatu vakagovana 1956Mubayiro weNobel muFizikisinokuda kwekubudirira kwavo.[3]Iyo inonyanya kushandiswa mhando ye transistor ndiyosimbi-oxide-semiconductor munda-effect transistor(MOSFET), iyo yakagadzirwa naMohamed AtallauyeDawon KahngkuBell Labs muna 1959.[4][5][6]Transistors yakashandura munda wemagetsi, uye yakagadzira nzira yezvidiki uye zvakachiparedhiyo,calculators,uyemakombiyuta, pakati pezvimwe zvinhu.
Mazhinji transistors anogadzirwa kubva kuchena kwazvosilicon, uye vamwe kubvagermanium, asi zvimwe zvimwe semiconductor zvinhu zvinoshandiswa dzimwe nguva.Transistor inogona kunge iine mhando imwe chete yekuchaja, mune yemunda-effect transistor, kana inogona kuve nemhando mbiri dzekutakura machaji mukati.bipolar junction transistorzvishandiso.Kuenzaniswa nevacuum tube, transistors kazhinji idiki uye inoda simba shoma kuti ishande.Mamwe machubhu evacuum ane zvakanakira pamusoro pema transistors paakanyanya kushanda ma frequency kana akakwira ekushanda voltages.Mazhinji marudzi ematransistors anogadzirwa kune akamisikidzwa zvakatemwa nevazhinji vagadziri.
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