IPD068P03L3G itsva yepakutanga Yemagetsi Zvikamu IC chip MCU BOM sevhisi mustock IPD068P03L3G

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Product Detail

Product Tags

Product Attributes

TYPE	DESCRIPTION
Category	Discrete Semiconductor Zvigadzirwa Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tepi & Reel (TR) Cheka Tape (CT) Digi-Reel®
Product Status	Active
FET Type	P-Channel
Vadivelu Comedy Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Ikozvino – Kudonhedza Kunodonhedza (Id) @ 25°C	70A (Tc)
Dhiraivha Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7720 pF @ 15 V
FET Feature	-
Kubvisa Simba (Max)	100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Nyaya	TO-252-3, DPak (2 Inotungamira + Tab), SC-63
Base Product Number	IPD068

Zvinyorwa & Media

RESOURCE TYPE	LINK
Datasheets	IPD068P03L3 G
Mamwe Magwaro Anoenderana	Chikamu Nhamba Yekutungamira
Featured Product	Data Processing Systems
HTML Datasheet	IPD068P03L3 G
EDA Models	IPD068P03L3GATMA1 neUltra Librarian

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Inoenderana
Moisture Sensitivity Level (MSL)	1 (Isina muganho)
REACH Status	SIKIRA Usina Kubatwa
ECCN	EAR99
HTSUS	8541.29.0095

Zvimwe Zvishandiso

ATTRIBUTE

DESCRIPTION

Mamwe Mazita

IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SP001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Standard Package

2,500

Transistor

Transistor is asemiconductor mudziyokujairaamplifykanachinjazviratidzo zvemagetsi uyesimba.Iyo transistor ndeimwe yezvivakwa zvekuvaka zvemazuva anozvemagetsi.[1]Inoumbwa nesemiconductor zvinhu, kazhinji nevanenge vatatuzviteshiyekubatanidza kune dhizaini yemagetsi.Avoltagekanacurrentinoshandiswa kune imwe peya ye transistor's terminals inodzora ikozvino kuburikidza neimwe peya yematerminal.Nekuti iyo inodzorwa (yekuburitsa) simba inogona kukwira kupfuura yekudzora (yekuisa) simba, transistor inogona kukwidziridza chiratidzo.Mamwe ma transistors anoiswa ega, asi akawanda akawanda anowanikwa akaiswa mukatimasekete akabatanidzwa.

Austro-Hungarian nyanzvi yefizikisi Julius Edgar Lilienfeldakaronga pfungwa yekuti amunda-effect transistormuna 1926, asi zvakange zvisingaite kugadzira mudziyo unoshanda panguva iyoyo.[2]Chishandiso chekutanga chekushanda chakavakwa chaive apoint-contact transistoryakagadzirwa muna 1947 neAmerican physicsJohn BardeenuyeWalter Brattainuchishanda pasiWilliam ShockleypaBell Labs.Vatatu vakagovana 1956Mubayiro weNobel muFizikisinokuda kwekubudirira kwavo.[3]Iyo inonyanya kushandiswa mhando ye transistor ndiyosimbi-oxide-semiconductor munda-effect transistor(MOSFET), iyo yakagadzirwa naMohamed AtallauyeDawon KahngkuBell Labs muna 1959.[4][5][6]Transistors yakashandura munda wemagetsi, uye yakagadzira nzira yezvidiki uye zvakachiparedhiyo,calculators,uyemakombiyuta, pakati pezvimwe zvinhu.

Mazhinji transistors anogadzirwa kubva kuchena kwazvosilicon, uye vamwe kubvagermanium, asi zvimwe zvimwe semiconductor zvinhu zvinoshandiswa dzimwe nguva.Transistor inogona kunge iine mhando imwe chete yekuchaja, mune yemunda-effect transistor, kana inogona kuve nemhando mbiri dzekutakura machaji mukati.bipolar junction transistorzvishandiso.Kuenzaniswa nevacuum tube, transistors kazhinji idiki uye inoda simba shoma kuti ishande.Mamwe machubhu evacuum ane zvakanakira pamusoro pema transistors paakanyanya kushanda ma frequency kana akakwira ekushanda voltages.Mazhinji marudzi ematransistors anogadzirwa kune akamisikidzwa zvakatemwa nevazhinji vagadziri.

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